Annealing | An-Najah Staff

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Mon, 2014-03-03 12:46 — Iyad SAADEDDIN

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80

Year of Publication:

2004

Link:

http://www.hindawi.com/journals/apec/2004/903039/abs/

Authors:

Iyad A. Sa'adeddin

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Palestine

[email protected]

Hikmat S. Hilal

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Subhi K. Salih

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

Mon, 2014-03-03 11:16 — Iyad SAADEDDIN

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 26 (2003), Issue 4, Pages 213-230

Year of Publication:

2003

Link:

http://www.hindawi.com/journals/apec/2003/320237/abs

Authors:

Iyad A. Sa'deddin

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Palestine

[email protected]

Subhi K. Salih

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Elisabeth Sellier

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots,for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

Sun, 2013-03-03 09:45 — Dr. Subhi Saleh

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 26 (2003), Issue 4, Pages 213-230, doi:10.1080/0882751031000116124

Year of Publication:

2003

Link:

http://www.hindawi.com/journals/apec/2003/320237/abs

Authors:

Subhi K. Salih

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

[email protected]

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority

Iyad A. Sa'deddin

College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority

Elisabeth Sellier

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots,for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Sun, 2013-03-03 09:44 — Dr. Subhi Saleh

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80, doi:10.1080/0882751031000116115

Year of Publication:

2004

Link:

http://www.hindawi.com/journals/apec/2004/903039/abs/

Authors:

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Subhi K. Salih

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

[email protected]

Iyad A. Sa'adeddin

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Effect of Cooling Rate of Pre-Annealed Cds Thin Film Electrodes Prepared by Chemical Bath Deposition: Enhancement of Photoelectrochemical Characteristics

Tue, 2011-03-08 14:20 — Iyad SAADEDDIN

Journal Title, Volume, Page:

Electrochimica Acta 54 (2009) 3433–3440

Year of Publication:

2009

Link:

http://www.sciencedirect.com/science/article/pii/S0013468609000802

Authors:

Iyad Saadeddin

Department of Physics, An-Najah N. University, PO Box 7, Nablus, Palestine

Current Affiliation:

Department of Physics, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Hikmat S. Hilal

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Rania M.A. Ismail

Clean Energy and Conservation Energy Study Program, An-Najah N. University, PO Box 7, Nablus, Palestine

Amer El-Hamouz

Department of Chemical Engineering, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Ahed Zyoud

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Preferred Abstract (Original):

Thin films of CdS, deposited by chemical bath deposition (CBD) onto films of fluorine-doped tin oxide/glass (glass/FTO) substrates were prepared and investigated for photoelectrochemical conversion (PEC) of light into electricity. Knowing the hazardous nature of CdS, the focal theme of this work was to modify the electrodes by simple economic ways to maximize their conversion efficiency and minimize their degradation under PEC conditions. This was to avoid leaching out of hazardous Cd²⁺ ions. Different parameters have been investigated for this purpose. Multi-deposition preparation, redox couple, and electrode etching affected electrode PEC characteristics. Consistent with earlier literature, annealing the electrode enhanced its conversion efficiency and stability. On the other hand, effect of cooling rate of pre-annealed CdS electrodes, prepared by CBD, on their PEC characteristics has been investigated here for the first time. Controlling the cooling rate was one major factor that affected CdS surface morphology, conversion efficiency and stability under PEC conditions. The major recommendation coming out here is that PEC characteristics of CdS thin film electrodes can be significantly enhanced by pre-annealing the electrode at ∼250 °C followed by its slow cooling.

Full Text

Effect of cooling rate of pre-annealed CdS thin film electrodes prepared by chemical bath deposition: Enhancement of photoelectrochemical characteristics

Tue, 2011-03-08 14:19 — Amer M EL-Hamouz

Journal Title, Volume, Page:

Electrochimica Acta 54 (2009) 3433–3440

Year of Publication:

2009

Link:

http://www.sciencedirect.com/science/article/pii/S0013468609000802

Authors:

Hikmat S. Hilal

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

[email protected]

Rania M.A. Ismail

Clean Energy and Conservation Energy Study Program, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Amer El-Hamouz

Department of Chemical Engineering, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Current Affiliation:

Department of Chemical Engineering, An-Najah National University, Nablus, Palestine

[email protected]

Ahed Zyoud

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Iyad Saadeddin

Department of Physics, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Preferred Abstract (Original):

Thin films of CdS, deposited by chemical bath deposition (CBD) onto films of fluorine-doped tin oxide/glass (glass/FTO) substrates were prepared and investigated for photoelectrochemical conversion (PEC) of light into electricity. Knowing the hazardous nature of CdS, the focal theme of this work was to modify the electrodes by simple economic ways to maximize their conversion efficiency and minimize their degradation under PEC conditions. This was to avoid leaching out of hazardous Cd2+ ions. Different parameters have been investigated for this purpose. Multi-deposition preparation, redox couple, and electrode etching affected electrode PEC characteristics. Consistent with earlier literature, annealing the electrode enhanced its conversion efficiency and stability. On the other hand, effect of cooling rate of pre-annealed CdS electrodes, prepared by CBD, on their PEC characteristics has been investigated here for the first time. Controlling the cooling rate was one major factor that affected CdS surface morphology, conversion efficiency and stability under PEC conditions. The major recommendation coming out here is that PEC characteristics of CdS thin film electrodes can be significantly enhanced by pre-annealing the electrode at ∼250 °C followed by its slow cooling.

Effect Of Cooling Rate of Pre-Annealed Cds Thin Film Electrodes Prepared by Chemical Bath Deposition: Enhancement of Photoelectrochemical Characteristics

Sat, 2011-02-05 19:08 — Ahed Husni Abdel Razaq Zyoud

Journal Title, Volume, Page:

Electrochimica Acta, vol. 54, no. 12, pp. 3433-3440

Year of Publication:

2009

Link:

http://cat.inist.fr/?aModele=afficheN&cpsidt=21304342

Authors:

Ahed Zyoud

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, Palestine

Current Affiliation:

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Hikmat S. Hilal

Department of Chemisry, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Ismail Rania M. A.

Clean Energy And Conservation Energy Study Program, An-Najah N. University, PO Box 7, Nablus, Palestine

Amer EL-Hamouz

Department of Chemical Engineering, An-Najah N. University, PO Box 7, Nablus, Palestine

Iyad Saadeddin

Department of Physics, An-Najah N. University, PO Box 7, Nablus, Palestine

[email protected]

Preferred Abstract (Original):

Thin films of CdS, deposited by chemical bath deposition (CBD) onto films of fluorine-doped tin oxide/glass (glass/FTO) substrates were prepared and investigated for photoelectrochemical conversion (PEC) of light into electricity. Knowing the hazardous nature of CdS, the focal theme of this work was to modify the electrodes by simple economic ways to maximize their conversion efficiency and minimize their degradation under PEC conditions. This was to avoid leaching out of hazardous Cd²⁺ ions. Different parameters have been investigated for this purpose. Multi-deposition preparation, redox couple, and electrode etching affected electrode PEC characteristics. Consistent with earlier literature, annealing the electrode enhanced its conversion efficiency and stability. On the other hand, effect of cooling rate of pre-annealed CdS electrodes, prepared by CBD, on their PEC characteristics has been investigated here for the first time. Controlling the cooling rate was one major factor that affected CdS surface morphology, conversion efficiency and stability under PEC conditions. The major recommendation coming out here is that PEC characteristics of CdS thin film electrodes can be significantly enhanced by pre-annealing the electrode at ∼250 °C followed by its slow cooling.

Full Text

Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

Wed, 2010-04-21 14:32 — Hikmat S. Hilal, D.Sc.

Journal Title, Volume, Page:

Active And Passive Electronic Components Volume 26 (2003), Issue 4, Pages 213-230

Year of Publication:

2003

Link:

http://www.hindawi.com/journals/apec/2003/320237/abs/

Authors:

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority

Current Affiliation:

Department of Chemistry, Najah N. University, P. O. Box 7, Nablus, West Bank, Palestine

[email protected]

Subhi K. Salih

College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority

Iyad A. Sa'deddin

College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority

Elisabeth Sellier

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Wed, 2010-04-21 14:32 — Hikmat S. Hilal, D.Sc.

Journal Title, Volume, Page:

Active and Passive Electronic Components, 27(2), (2004) 69-80

Year of Publication:

2004

Link:

http://connection.ebscohost.com/c/articles/13072953/effect-annealing-cooling-rat...

Authors:

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Current Affiliation:

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

[email protected]

Subhi K. Salih

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Iyad A. Sa'adeddin

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs. potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs. The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600 C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600 C showed better photocurrent density vs. potential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700 C, showed better photocurrent density vs. potential plots and higher efficiency than their slowly cooled counterparts.

Effect of Cooling Rate of Pre-Annealed Cds Thin Film Electrodes Prepared By Chemical Bath Deposition: Enhancement of Photoelectrochemical Characteristics

Wed, 2010-04-21 14:32 — Hikmat S. Hilal, D.Sc.

Journal Title, Volume, Page:

Electrochimica Acta (2009) Volume: 54, Issue: 12, Pages: 3433-3440

Year of Publication:

2009

Link:

http://linkinghub.elsevier.com/retrieve/pii/S0013468609000802

Authors:

Hikmat S. Hilal

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Current Affiliation:

Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestine

[email protected]

Rania M.A. Ismail

Clean Energy and Conservation Energy Study Program, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Amer El-Hamouz

Department of Chemical Engineering, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Ahed Zyoud

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Iyad Saadeddin

Department of Physics, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Preferred Abstract (Original):

Thin films of CdS, deposited by chemical bath deposition (CBD) onto films of fluorine-doped tin oxide/glass (glass/FTO) substrates were prepared and investigated for photoelectrochemical conversion (PEC) of light into electricity. Knowing the hazardous nature of CdS, the focal theme of this work was to modify the electrodes by simple economic ways to maximize their conversion efficiency and minimize their degradation under PEC conditions. This was to avoid leaching out of hazardous Cd²⁺ ions. Different parameters have been investigated for this purpose. Multi-deposition preparation, redox couple, and electrode etching affected electrode PEC characteristics. Consistent with earlier literature, annealing the electrode enhanced its conversion efficiency and stability. On the other hand, effect of cooling rate of pre-annealed CdS electrodes, prepared by CBD, on their PEC characteristics has been investigated here for the first time. Controlling the cooling rate was one major factor that affected CdS surface morphology, conversion efficiency and stability under PEC conditions. The major recommendation coming out here is that PEC characteristics of CdS thin film electrodes can be significantly enhanced by pre-annealing the electrode at ∼250 °C followed by its slow cooling.

Full Text