SEM
Synthesis of Nano-sized Sulfur Nanoparticles and their Antibacterial Activities
Mon, 2015-02-09 11:43 — Ismail WaradSulfur nanoparticles (S-NPs) were prepared in this work by precipitation method using sodium thiosulphate and tetraoctylammonium bromide surfactants in conc. hydrochloric acid media. The sizes and shapes of S-NPs were confirmed by scanning electron microscope (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. Broth micro-dilution method was applied to determine antibacterial activity of S-NPs against Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa reference strains. S-NPs exhibited antimicrobial activity (MIC = 5.47µg/ml) against Staphylococcus aureus strain (Gram-positive bacterium). On the other hand, no antimicrobial activity was detected against Gram-negative bacteria isolates (Escherichia coli and Pseudomonas aeruginosa) at 0.68 to 800 µg/ml.
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Synthesis of Nano-sized Sulfur Nanoparticles and their Antibacterial Activities
Mon, 2015-02-09 11:34 — Ayman Sulaiman HusseinSulfur nanoparticles (S-NPs) were prepared in this work by precipitation method using sodium thiosulphate and tetraoctylammonium bromide surfactants in conc. hydrochloric acid media. The sizes and shapes of S-NPs were confirmed by scanning electron microscope (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. Broth micro-dilution method was applied to determine antibacterial activity of S-NPs against Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa reference strains. S-NPs exhibited antimicrobial activity (MIC = 5.47µg/ml) against Staphylococcus aureus strain (Gram-positive bacterium). On the other hand, no antimicrobial activity was detected against Gram-negative bacteria isolates (Escherichia coli and Pseudomonas aeruginosa) at 0.68 to 800 µg/ml.
Synthesis of Nano-sized Sulfur Nanoparticles and their Antibacterial Activities
Mon, 2015-02-09 10:42 — Motasem Yosof AlmasriSulfur nanoparticles (S-NPs) were prepared in this work by precipitation method using sodium thiosulphate and tetraoctylammonium bromide surfactants in conc. hydrochloric acid media. The sizes and shapes of S-NPs were confirmed by scanning electron microscope (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. Broth micro-dilution method was applied to determine antibacterial activity of S-NPs against Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa reference strains. S-NPs exhibited antimicrobial activity (MIC = 5.47µg/ml) against Staphylococcus aureus strain (Gram-positive bacterium). On the other hand, no antimicrobial activity was detected against Gram-negative bacteria isolates (Escherichia coli and Pseudomonas aeruginosa) at 0.68 to 800 µg/ml.
Synthesis of Nano-sized Sulfur Nanoparticles and their Antibacterial Activities
Sun, 2015-02-08 15:55 — Iyad SAADEDDINSulfur nanoparticles (S-NPs) were prepared in this work by precipitation method using sodium thiosulphate and tetraoctylammonium bromide surfactants in conc. hydrochloric acid media. The sizes and shapes of S-NPs were confirmed by scanning electron microscope (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. Broth micro-dilution method was applied to determine antibacterial activity of S-NPs against Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa reference strains. S-NPs exhibited antimicrobial activity (MIC = 5.47µg/ml) against Staphylococcus aureus strain (Gram-positive bacterium). On the other hand, no antimicrobial activity was detected against Gram-negative bacteria isolates (Escherichia coli and Pseudomonas aeruginosa) at 0.68 to 800 µg/ml.
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
Mon, 2014-03-03 11:16 — Iyad SAADEDDINThe effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots,for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.
Copper(II)-Oxide Nanostructures: Synthesis, Characterizations and their Applications–Review
Mon, 2013-05-20 16:17 — Ismail Warad
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
Sun, 2013-03-03 09:45 — Dr. Subhi SalehThe effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots,for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates
Wed, 2010-04-21 14:32 — Hikmat S. Hilal, D.Sc.The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.
