Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

subhisaleh's picture
Journal Title, Volume, Page: 
Active and Passive Electronic Components Volume 26 (2003), Issue 4, Pages 213-230, doi:10.1080/0882751031000116124
Year of Publication: 
2003
Authors: 
Subhi K. Salih
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Current Affiliation: 
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Hikmat S. Hilal
College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority
Iyad A. Sa'deddin
College of Sciences, An-Najah N. University, P.O. Box 7, West Bank, Palestinian Authority
Elisabeth Sellier
Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France
Guy Campet
Institut de Chimie de la Matiere Condensee de Bordeaux du CNRS, Chateau Brivazac, avenue du Dr. A. Schweitzer, Pessac 33608, France
Preferred Abstract (Original): 

The effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots,for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

AttachmentSize
Modification of n-Si Characteristics by Annealing and Cooling at Different Rates2.38 MB