Dark current

Raqi Shubietah's picture

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Journal Title, Volume, Page: 
Solid State Sciences Volume 6, Issue 1, Pages 139-146
Year of Publication: 
2004
Authors: 
Raqi Shubeita
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Current Affiliation: 
Department of Pharmacy, Faculty of Medicine and Health Sciences, An-Najah National University, Nablus, Palestine
Iyad Saadeddin
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Hikmat S.Hilal
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Wajdy M. Ateereh
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Taleb Al-Tel
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Guy Campet
ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France
Preferred Abstract (Original): 

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.


Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

iyad's picture

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Journal Title, Volume, Page: 
Solid State Sciences Volume 6, Issue 1, January 2004, Pages 139-146
Year of Publication: 
2004
Authors: 
Iyad Saadeddin
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Current Affiliation: 
Department of Physics, Faculty of Science, An-Najah National University, Palestine
Hikmat S.Hilal
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Wajdy M. Ateereh
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Taleb Al-Tel
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Raqi Shubeita
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Guy Campet
ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France
Preferred Abstract (Original): 

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.


Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

iyad's picture

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Journal Title, Volume, Page: 
Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80
Year of Publication: 
2004
Authors: 
Iyad A. Sa'adeddin
College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine
Current Affiliation: 
Department of Physics, Faculty of Science, An-Najah National University, Palestine
Hikmat S. Hilal
College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine
Subhi K. Salih
College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine
Guy Campet
Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France
Preferred Abstract (Original): 

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

subhisaleh's picture

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Journal Title, Volume, Page: 
Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80, doi:10.1080/0882751031000116115
Year of Publication: 
2004
Authors: 
Hikmat S. Hilal
College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Subhi K. Salih
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Current Affiliation: 
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Iyad A. Sa'adeddin
College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Guy Campet
Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France
Preferred Abstract (Original): 

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Hikmat S. Hilal's picture

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Journal Title, Volume, Page: 
Solid State Sciences Volume 6, Issue 1, January 2004, Pages 139-146
Year of Publication: 
2004
Authors: 
Hikmat S.Hilal
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Current Affiliation: 
Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Wajdy M. Ateereh
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Taleb Al-Tel
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Raqi Shubeita
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Iyad Saadeddin
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Guy Campet
ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France
Preferred Abstract (Original): 

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.


Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

Hikmat S. Hilal's picture

Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Journal Title, Volume, Page: 
Active and Passive Electronic Components, 27(2), (2004) 69-80
Year of Publication: 
2004
Authors: 
Hikmat S. Hilal
College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, Palestine
Current Affiliation: 
Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Subhi K. Salih
College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Iyad A. Sa'adeddin
College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority
Guy Campet
Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France
Preferred Abstract (Original): 

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs. potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs. The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600 C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600 C showed better photocurrent density vs. potential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700 C, showed better photocurrent density vs. potential plots and higher efficiency than their slowly cooled counterparts.

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