Dark current | An-Najah Staff

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Wed, 2014-07-09 09:58 — Raqi Mohammad Hasan Shubietah

Journal Title, Volume, Page:

Solid State Sciences Volume 6, Issue 1, Pages 139-146

Year of Publication:

2004

Link:

http://www.sciencedirect.com/science/article/pii/S1293255803002516

Authors:

Raqi Shubeita

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Current Affiliation:

Department of Pharmacy, Faculty of Medicine and Health Sciences, An-Najah National University, Nablus, Palestine

[email protected]

Iyad Saadeddin

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Hikmat S.Hilal

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Wajdy M. Ateereh

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Taleb Al-Tel

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Guy Campet

ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France

Preferred Abstract (Original):

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.

Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Mon, 2014-03-03 13:07 — Iyad SAADEDDIN

Journal Title, Volume, Page:

Solid State Sciences Volume 6, Issue 1, January 2004, Pages 139-146

Year of Publication:

2004

Link:

http://www.sciencedirect.com/science/article/pii/S1293255803002516

Authors:

Iyad Saadeddin

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Palestine

[email protected]

Hikmat S.Hilal

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Wajdy M. Ateereh

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Taleb Al-Tel

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Raqi Shubeita

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine

Guy Campet

ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France

Preferred Abstract (Original):

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.

Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Mon, 2014-03-03 12:46 — Iyad SAADEDDIN

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80

Year of Publication:

2004

Link:

http://www.hindawi.com/journals/apec/2004/903039/abs/

Authors:

Iyad A. Sa'adeddin

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Palestine

[email protected]

Hikmat S. Hilal

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Subhi K. Salih

College of Science, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Effect of Annealing And of Cooling Rates on N-Gaas Electrode Photoelectrochemical Characteristics

Sun, 2013-03-03 09:44 — Dr. Subhi Saleh

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 27 (2004), Issue 2, Pages 69-80, doi:10.1080/0882751031000116115

Year of Publication:

2004

Link:

http://www.hindawi.com/journals/apec/2004/903039/abs/

Authors:

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Subhi K. Salih

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

[email protected]

Iyad A. Sa'adeddin

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600ºC. For samples annealed at higher temperatures, quenching gave better dark-current density vs potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600ºC showed better photocurrent densityvspotential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700ºC, showed better photocurrent density vs potential plots and higher efficiency than their slowly cooled counterparts.

Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Wed, 2011-03-09 10:08 — Hikmat S. Hilal, D.Sc.

Journal Title, Volume, Page:

Solid State Sciences Volume 6, Issue 1, January 2004, Pages 139-146

Year of Publication:

2004

Link:

http://www.sciencedirect.com/science/article/pii/S1293255803002516

Authors:

Hikmat S.Hilal

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Current Affiliation:

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

[email protected]

Wajdy M. Ateereh

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Taleb Al-Tel

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Raqi Shubeita

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Iyad Saadeddin

Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

Guy Campet

ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France

Preferred Abstract (Original):

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.

Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques

Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Wed, 2010-04-21 14:32 — Hikmat S. Hilal, D.Sc.

Journal Title, Volume, Page:

Active and Passive Electronic Components, 27(2), (2004) 69-80

Year of Publication:

2004

Link:

http://connection.ebscohost.com/c/articles/13072953/effect-annealing-cooling-rat...

Authors:

Hikmat S. Hilal

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, Palestine

Current Affiliation:

Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine

[email protected]

Subhi K. Salih

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Iyad A. Sa'adeddin

College of Sciences, An-Najah N. University, P.O. Box 7, Nablus, West Bank, Palestinian Authority

Guy Campet

Institut de Chimie de la Matiere Condensee de Bordeaux, Bordeaux University, Av. Dr. A. Schweitzer, Pessac 33608, France

Preferred Abstract (Original):

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs. potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs. The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600 C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600 C showed better photocurrent density vs. potential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700 C, showed better photocurrent density vs. potential plots and higher efficiency than their slowly cooled counterparts.