Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Hikmat S. Hilal's picture
Journal Title, Volume, Page: 
Solid State Sciences Volume 6, Issue 1, January 2004, Pages 139-146
Year of Publication: 
2004
Authors: 
Hikmat S.Hilal
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Current Affiliation: 
Department of Chemistry, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Wajdy M. Ateereh
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Taleb Al-Tel
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Raqi Shubeita
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Iyad Saadeddin
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, West Bank, Palestine
Guy Campet
ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France
Preferred Abstract (Original): 

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.


Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques