Enhancement of n-Gaas Characteristics by Combined Heating, Cooling Rate And Metalloporphyrin Modification Techniques

Raqi Shubietah's picture
Journal Title, Volume, Page: 
Solid State Sciences Volume 6, Issue 1, Pages 139-146
Year of Publication: 
2004
Authors: 
Raqi Shubeita
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Current Affiliation: 
Department of Pharmacy, Faculty of Medicine and Health Sciences, An-Najah National University, Nablus, Palestine
Iyad Saadeddin
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Hikmat S.Hilal
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Wajdy M. Ateereh
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Taleb Al-Tel
Faculty of Science, An-Najah N. University, PO Box 7, Nablus, Palestine
Guy Campet
ICMCB-CNRS, 87, av. du Dr. A. Schweitzer, 33608, Pessac cedex, France
Preferred Abstract (Original): 

Different modification techniques, namely, preheating, controlling the cooling rate and modification with tetra(-4-pyridyl)porphyrinatomanganese(III) have been used to enhance photoelectrochemical characteristics of n-GaAs electrodes in light-to-electricity conversions. Combination of such three techniques together yielded electrodes with better darkcurrent density vs potential plots and photocurrent density vs potential plots. Higher efficiency and stability were also observed for electrodes modified by such combined techniques.


Enhancement of n-GaAs characteristics by combined heating, cooling rate and metalloporphyrin modification techniques