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Metalloporphyrin/Polysiloxane Modified N-Gaas Surfaces: Effect on Photoelectrochemical Efficiency and Surface Stability

salshakshir@najah.edu's picture
Wed, 2013-04-24 12:25 — Samar Al Shakhshir
Journal Title, Volume, Page: 
Journal of Electroanalytical Chemistry (2002) Volume: 527, Issue: 1-2, Pages: 47-55
Year of Publication: 
2002
Link: 
http://www.mendeley.com/research/metalloporphyrinpolysiloxane-modified-ngaas-sur...
Authors: 
Samar Shakhshir
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, Palestine
Current Affiliation: 
Department of Chemistry, An-Najah National University, Nablus, Palestine
[email protected]
Hikmat S. Hilal
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, Palestine
Moayyad Masoud
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, Palestine
Najeh Jisrawi
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, Palestine
Preferred Abstract (Original): 

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate (as an MnIII+MnII ion mixture) was embedded into a polysiloxane polymer matrix and attached to the surfaces of the n-GaAs electrode. The n-GaAs/polymer/MnP system was annealed under nitrogen and used for a photoelectrochemical study in a water/LiClO4/Fe(CN)6 3 −/Fe(CN)6 4− system. The values of short-circuit currents, measured after minutes of illumination, were significantly enhanced by modification. The modified electrode surfaces were more stable to degradation, in the dark and under illumination, than the unmodified ones. Furthermore, the modified electrodes showed higher light-to-electricity conversion efficiency than the unmodified ones. The methodology described here is advantageous in the sense that the semiconductor electrode properties can be enhanced in more than one aspect at the same time.