Ge–Se–In | An-Najah Staff

Local Environment of Indium in ‎Ge23.33Se64.67In12 Chalcogenide Glass

Wed, 2014-02-19 13:54 — Ghassan Saffarini

Journal Title, Volume, Page:

Materials Letters Volume 35, Issues 5–6 , Pages 309–313

Year of Publication:

1998

Link:

http://www.sciencedirect.com/science/article/pii/S0167577X97002711

Authors:

G. Saffarini

Physics Department, An-Najah National University, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Palestine

[email protected]

J.M. Saiter

Laboratoire d'Etude et de Caracterisation des Amorphes et des Polymères, Faculté des Sciences, Université de Rouen, 76821 Mont Saint Aignan CEDEX, France

J. Ledru

Laboratoire d'Etude et de Caracterisation des Amorphes et des Polymères, Faculté des Sciences, Université de Rouen, 76821 Mont Saint Aignan CEDEX, France

S. Benazeth

LURE, Bâtiment 209d, Université de Paris-Sud, 91405 Orsay Cedex, France

Preferred Abstract (Original):

EXAFS measurements, from the In K edge, on Ge_23.33Se_64.67In₁₂ glass, have been performed. For this glass, it is found that In is only coordinated with Se atoms. By complementing the EXAFS results obtained from the fitting procedure followed in this work with the earlier reported DSC results obtained on this system, it is concluded that in this glass, the coordination number of In is equal to three. Moreover, this approach of coupling EXAFS with DSC results allows one to calibrate the Γ factor for systems which lack a reference material, or systems for which an ab initio calculation cannot be performed, as in our case.

The Composition Dependence of The Optical Band Gap In Ge-Se-In Thin Films

Mon, 2011-03-07 12:09 — Ghassan Saffarini

Journal Title, Volume, Page:

Optical Materials, Volume 29, Issue 9, May 2007, Pages 1143-1147

Year of Publication:

2007

Link:

http://dx.doi.org/10.1016/j.optmat.2006.05.003

Authors:

G. Saffarini

LECAP, PBM, UMR6522, Institut des Matériaux de Rouen, Université de Rouen, BP 12, 76801 Saint Etienne du Rouvray Cedex, France

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

[email protected]

J.M. Saiter

LECAP, PBM, UMR6522, Institut des Mate´riaux de Rouen, Universite´ de Rouen, BP 12, 76801 Saint Etienne du Rouvray Cedex, France

H. Schmitt

Technische Physik, Universitat des Saarlandes, 66123 Saarbrucken, Germany

Preferred Abstract (Original):

Bulk glasses with the chemical composition Ge_y Se_94−yIn₆ (8 ⩽ y ⩽ 30 at%) have been prepared from high purity constituent elements. Fragments of the bulk glasses are used to deposit thin films by vacuum thermal evaporation. The optical band gaps (E_g s) of the as-deposited films have been measured. The allowed optical transition is found to be indirect. The relation of E_g to the covalent coordination number, Z, is demonstrated by varying the composition parameter y of the thin films. A maximum in the compositional dependence of E_g is attained at Z = 2.63. The cohesive energies (CE) of the investigated samples have also been calculated using the method suggested by the chemical bond approach. It is found that the composition dependence of the CE also possesses a peak at Z = 2.63.A plausible explanation based on the bonding considerations between the constituents has been provided for the understanding of the E_g-Z and CE-Z dependences for these Ge–Se–In thin films.
PACS 61.43.Dq;78.66.Jg