thermal vacuum evaporation

Hikmat S. Hilal's picture

Effect of annealing on the properties of SnSe film prepared by thermal vacuum evaporation in the presence of argon gas

Journal Title, Volume, Page: 
Advanced Materials Research, 1024, 323-326
Year of Publication: 
2014
Authors: 
Nordin Sabli
University Putra Malaysia
Current Affiliation: 
Universiti Putra Malaysia
Zainal Abidin Talib
University Putra Malaysia
Wan Mahmood Mat Yunus
Universiti Putra Malaysia
Zulkarnain Zainal
Universiti Putra Malaysia
Current Affiliation: 
University Putra Malaysia
Hikmat S. Hilal
An-Najah National University
Current Affiliation: 
An-Najah National University
Mohd Shahril Husin
Universiti Putra Malaysia
Preferred Abstract (Original): 
The differences in structural, compositional and photoelectrochemical properties for 
SnSe films annealed at different temperatures, under nitrogen atmosphere, were studied. Annealing 
the film electrode significantly improved its crystallinity but lowered its photoresponse. The 
photoresponse lowering was thus attributed to lowering in the defect concentrations. 

DOI:       10.4028/www.scientific.net/AMR.1024.323

Hikmat S. Hilal's picture

CuZnSnSe thin film electrodes prepared by vacuum evaporation: Enhancement of surface morphology and photoelectrochemical characteristics by argon gas

Journal Title, Volume, Page: 
Materials Science Forum, ISESCO Conference on Nanomaterials and Applications 2012, P.273; ISBN-13: 978-3-03785-695-6
Year of Publication: 
2013
Authors: 
Hikmat S. Hilal
SSERL, An-Najah N. University, Nablus, Palestine
Current Affiliation: 
Department Of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestine
Nordin Sabli
Zainal Abidin Talib
Wan Mahmood Mat Yunus
Zulkarnain Zaina
Masatoshi Fuji
Preferred Abstract (Original): 

CuZnSnSe thin films were deposited by thermal vacuum evaporation with and without argon gas stream at room temperature. Effect of argon gas on surface morphology and on photoelectrochemical (PEC) characteristics of the films was studied. The electrodes prepared under argon gas showed better enhanced characteristics, due to slower nucleation and growth due to dilution effect of the inert gas. While both electrodes showed soundly good PEC behaviors in a hexacyanoferrate(III)/hexacyanoferrate(II) redox couple, the electrode with argon gas showed 20 fold enhancement in photoactivity, compared to the one without argon gas. The results manifested thin film electrode performance can be enhanced simply by inclusion of argon inert gas inside the preparation chamber, with no need for other procedures such as annealing.

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