Tin selenide (SnSe) and copper indium diselenide
(CuInSe2) compounds were synthesized by high temperature reaction
method using combination of sealed ampoule (at relatively low pressure ~10-1
Pa without inert gas) and heating at specific temperature profile in rocking
furnace. Powder X-Ray diffraction analysis reveals that the products involved
only single phases of SnSe and of CuInSe2 only. Using the reaction
products as source materials, the SnSe and CuInSe2 thin films were
vacuum-deposited on glass substrates at room temperature. Structural,
elemental, surface morphological and optical properties of the as-deposited
films were studied by X-Ray diffraction (XRD), Energy Dispersive X-Ray (EDX)
Analysis, Field Emission Scanning Electron Microscopy (FESEM) and UV-Vis-NIR
spectroscopy. Single phase of SnSe and CuInSe2 films were obtained
by thermal evaporation technique from synthesized SnSe and CuInSe2 compound
without further treatment.