Modiﬁcation | An-Najah Staff

n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

Wed, 2013-04-24 13:01 — Samar Al Shakhshir

Journal Title, Volume, Page:

Active and Passive Electronic Components Volume 26 (2003), Issue 1, Pages 11-21

Year of Publication:

2003

Link:

http://www.hindawi.com/journals/apec/2003/651253/cta/

Authors:

Samar Shakhshir

Department of Chemistry, An-Najah National University, Nablus, Palestine

Current Affiliation:

Department of Chemistry, An-Najah National University, Nablus, Palestine

[email protected]

Hikmat S. Hilal

Department of Chemistry, An-Najah National University, Nablus, Palestine

Moayad Masoud

Department of Chemistry, An-Najah National University, Nablus, Palestine

Najeh Jisraw

Department of Chemistry, An-Najah National University, Nablus, Palestine

Preferred Abstract (Original):

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n-GaAs wafers. The n-GaAs=polymer=MnP system was annealed under nitrogen and used for photoelectrochemical study in water=LiClO4=Fe(CN)3 6 = Fe(CN)4 6 system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.