n-GaAs Band-Edge Repositioning by Modification with Metalloporphyrin/Polysiloxane Matrices

Hikmat S. Hilal's picture
Journal Title, Volume, Page: 
Active and Passive Electronic Components Volume 26 (2003), Issue 1, Pages 11-21
Year of Publication: 
2003
Authors: 
Hikmat S. Hilal
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian Authority
Current Affiliation: 
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestine
Moayyad Masoud
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian Authority
Samar Shakhshir
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian Authority
Najeh Jisraw
Department of Chemistry, An-Najah N. University, Nablus, PO Box 7, West Bank, Palestinian Authority
Preferred Abstract (Original): 

Tetra(-4-pyridyl)porphyrinatomanganese(III)sulfate, MnP, (in the forms of MnIII and MnII mixture), was embedded into a polysiloxane polymer matrix and attached to the surfaces of n-GaAs wafers. The n-GaAs=polymer=MnP system was annealed under nitrogen and used for photoelectrochemical study in water=LiClO4=Fe(CN)3 6 = Fe(CN)4 6 system. The results indicated a positive shift in the value of the flat-band potential of the semiconductor due to MnP. This was manifested by shifting the values of the dark-current onset potential and the photo-current open-circuit potential towards more positive values. These findings are potentially valuable in future applications of solar energy in hydrogen and oxygen production from water.

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