Tin selenide, doping, thermal vacuum evaporation, thin film, photoresponse
Effect of Argon Gas Flow Rate on Properties of Film Electrodes Prepared by Thermal Vacuum Evaporation from synthesized Cu2SnSe3 Source
Sat, 2014-03-15 17:54 — Hikmat S. Hilal, D.Sc.
Journal Title, Volume, Page:
AIP Conference Proceedings, 1588, (2014) 261-264; doi: 10.1063/1.4866957
Year of Publication:
2014
Preferred Abstract (Original):
This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor
film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe
formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of
photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu
atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.
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