Effect of Argon Gas Flow Rate on Properties of Film Electrodes Prepared by Thermal Vacuum Evaporation from synthesized Cu2SnSe3 Source

Hikmat S. Hilal's picture
Journal Title, Volume, Page: 
AIP Conference Proceedings, 1588, (2014) 261-264; doi: 10.1063/1.4866957
Year of Publication: 
2014
Authors: 
Nordin Sabli
USM, Malaysia
Current Affiliation: 
USM, Malaysia
Zainal Abidin Talib
USM
Current Affiliation: 
USM, Malaysia
Wan Mahmood Mat Yunus
USM, Malaysia
Current Affiliation: 
USM, Malaysia
Zulkarnain Zainal
USM, Malaysia
Current Affiliation: 
USM, Malaysia
Hikmat S. Hilal
An-Najah National University
Current Affiliation: 
An-Najah National University
Masatoshi Fujii
USM, Malaysia
Current Affiliation: 
USM, Malaysia
Preferred Abstract (Original): 
This work describes a new technique to enhance photoresponse of metal chalcogenide-based semiconductor
film electrodes deposited by thermal vacuum evaporation under argon gas flow from synthesized Cu2SnSe3 sources. SnSe
formation with Cu-doped was obtained under higher argon gas flow rate (VA = 25 cm3/min). Higher value of
photoresponse was observed for films deposited under VA = 25 cm3/min which was 9.1%. This finding indicates that Cu
atoms inside the SnSe film were important to increase carrier concentrations that promote higher photoresponse.