A. Semiconductors

mkelsaid's picture

Study of the Energy Level-Crossings in GaAs/Aix Ga1 -x As Quantum Dots

Journal Title, Volume, Page: 
Solid State Communications, Volume 97, Issue 11, March 1996, Pages 971–974
Year of Publication: 
1996
Authors: 
Mohammad El-Said
Department of Physics, Eastern Mediterranean University, Gazi Magosa, N. Cyprus, Mersin 10, Turkey
Current Affiliation: 
Department of Physics, Faculty of Science, An-Najah National University, Nablus, Palestine
Preferred Abstract (Original): 

The energy spectra of two interacting electrons, confined by a parabolic potential, in a magnetic field applied perpendicular to the plane of the quantum dot are obtained. The electron-electron interaction and the energy level-crossings are discussed. Comparison shows that our calculated spectra of the quantum dot states are in good agreement with those of Wagner et al.

2197's picture

FP-LAPW and Pseudopotential Calculations of the Structural Phase Transformations of GaN under high-pressure

Journal Title, Volume, Page: 
Solid State Communications, Volume 116, Issue 7, 16 October 2000, Pages 389-393
Year of Publication: 
2000
Authors: 
M. Abu-Jafar
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Current Affiliation: 
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
A.I. Al-Sharif
Department of Physics, Faculty of Science, Yarmouk University, Irbid, Jordan
A. Qteish
Department of Physics, Faculty of Science, Yarmouk University, Irbid, Jordan
Preferred Abstract (Original): 
FP-LAPW and pseudopotential approaches have been used to investigate the structural phase transformations of GaN under high-pressure. In these calculations the local density and generalized gradient approximations (LDA and GGA) for the exchange-correlation potential have been used. Moreover, the electronic structure of the wurtzite (WZ), rocksalt (RS) and zinc-blende (ZB) phases of GaN have been calculated. The GGA result for the transition pressure of the WZ→RS transition is of 42.3 GPa, which is in very good agreement with the X-ray absorption spectroscopy value of 47 GPa. The gradient corrections to the LDA, included via GGA, have small, but not negligible, effects on the properties studied. RS-GaN is predicted to be an indirect-band-gap semiconductor, with a band-gap of 1.7 eV.
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