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Memory effects in RF transmitters

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Tue, 2016-02-16 12:09 — Yousef Dama
Authors: 
T. Sadeghpour
Raed Abd-Alhameed
Haleh Karkhaneh
Issa Tamer Elfergani
Yousef Dama
Current Affiliation: 
Department of Telecommunication Engineering, Faculty of Engineering and Information Technology, An-Najah National University, Nablus. Palestine
[email protected]
Ayaz Ghorbani
Peter Excell
Preferred Abstract (Original): 

This paper investigates memory effects in RF transmitters due to the high-power amplifiers (HPA). Phenomena such as asymmetries in lower and upper intermodulation terms, and variation of nonlinear characteristic, depending on signal history, are usually observed at the output of high-power amplifiers. These effects have been practically investigated using a 3.5-GHz N-channel enhancement-mode lateral MOSFET power amplifier and different signals such as two-tone and multicarrier OFDM.