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Surface modified n-GaAs semiconductor with metalloporphyrinatomanganese (III) encapsulated in polysiloxane matrices: effect of modification on the semiconductor characteristics at the solid/liquid junction

salshakshir@najah.edu's picture
Wed, 2015-10-14 12:19 — Samar Al Shakhshir
Journal Title, Volume, Page: 
(Sharjah Intermational Solar Energy Conference, Sharjah University, Sharjah, UAE, Feb. 2001
Year of Publication: 
2001
Authors: 
H.S. Hilal S. Shakhshir, and Moayyad Massoud
Preferred Abstract (Original): 

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