Optical Band Gap In Relation To The Average Coordination Number In Ge-S-Bi Thin Films

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Journal Title, Volume, Page: 
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Volume 239 Issue 1, Pages 251 - 256
Year of Publication: 
2003
Authors: 
G. Saffarini
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
Current Affiliation: 
Department of Physics, Faculty of Sciences, An-Najah National University, Palestine
H. Schmitt
Technische Physik, Universität des Saarlandes, 66123 Saarbrücken, Germany
H. Shanak
Technische Physik, Universität des Saarlandes, 66123 Saarbrücken, Germany
J. Müller
Technische Physik, Universität des Saarlandes, 66123 Saarbrücken, Germany
J. Nowoczin
Technische Physik, Universität des Saarlandes, 66123 Saarbrücken, Germany
Preferred Abstract (Original): 

Chalcogenide glasses belonging to the GexS94 − xBi6 system (14 ≤ x ≤ 28.33 at%) have been prepared from high purity constituent elements. Thin films of the same materials have been deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited films. The allowed optical transition is found to be indirect and the corresponding optical gaps, Eg, are determined. The variation of Eg with the average coordination number, 〈r〉, is also investigated. The observed Eg − 〈r〉 dependence is discussed on the basis of the chemical bonding between the constituents and the rigidity percolation threshold behavior of the network.

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