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Photoionization of Shallow Donor Impurities in Finite-Barrier Quantum Wells

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Mon, 2014-03-31 10:09 — Mohammad Khalil Mohammad Elsaid
Journal Title, Volume, Page: 
physica status solidi (b) Volume 187, Issue 1, pages 93–97, 1 January 1995
Year of Publication: 
1995
Link: 
http://onlinelibrary.wiley.com/doi/10.1002/pssb.2221870108/abstract
Authors: 
K. F. Ilaiwi
Department of Sciences, Philadelphia University, Sweileh
M. El-Said
Department of Sciences, Philadelphia University, Sweileh
Current Affiliation: 
Department of Physics, Faculty of Science, An-Najah National University, Nablus, Palestine
[email protected]
Preferred Abstract (Original): 

The dependence of the photoionization cross-section on photon energy is calculated for shallow donors in finite-barrier GaAs/Ga1−xAlxAs quantum wells as well as the binding energy as a function of well width. The effect of a magnetic field is also considered.