SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method

Journal Title, Volume, Page:

Electrochemistry: The Electrochemical Society of Japan, 82 (1), 25-30 ;

Year of Publication:

2014

Link:

Authors:

Nordin Sabli

University Putra Malaysia

Current Affiliation:

UPM

Zainal Abidin Talib

UPM

Current Affiliation:

UPM

Wan Mahmood Mat Yunus

UPM

Current Affiliation:

UPM

Zulkarnain Zainal

UPM

Current Affiliation:

UPM

Hikmat S. Hilal

An-Najah National University

Current Affiliation:

An-Najah National University

Preferred Abstract (Original):

The effect of argon gas condensation (AGC) on crystallinity, surface morphology and photoelectrochemical (PEC)

characteristics of SnSe thin films, prepared by thermal vacuum deposition onto ITO/glass substrates, has been

investigated. The focal theme was to improve growth process of SnSe thin films and consequently enhance

their PEC characteristics, by including argon gas during film manufacturing. For comparison purposes, the films

grown With- and Without-AGC were characterized using various techniques such as X-ray diffractometry, UV-VIS

spectroscopy, and SEM. The results indicate enhancement in film crystallinity and surface morphology by inclusion

of argon gas. Such enhancement has been attributed to slower deposition rate due to argon gas presence.

Photoelectrochemical property of SnSe thin film electrodes was studied using linear sweep voltammetry in dark and

under illumination. The With-AGC electrodes showed higher photoactivity than the Without-AGC counterparts.

Enhancement of PEC characteristics of SnSe With-AGC thin film electrodes is consistent with their crystallinity and

surface uniformity. Inclusion of AGC in thermal vacuum deposition processes is potentially valuable to prepare

enhanced SnSe thin film electrodes even without the need for further treatment such as etching or annealing.

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An-Najah Staff