Contact Resistance as a Probe of Near-Interface Ferromagnetism in Gamnas/Cu Bilayers

Journal Title, Volume, Page:

Applied Physics Letters 100, 212-403

Year of Publication:

2012

Link:

http://scitation.aip.org/content/aip/journal/apl/100/21/10.1063/1.4716471

Authors:

D. Dahliah

Department of Physics, Miami University, Oxford, Ohio 45056, USA

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Nablus, Palestine

[email protected]

B. Paudel

Department of Physics, Miami University, Oxford, Ohio 45056, USA

G. Riley

Department of Physics, Miami University, Oxford, Ohio 45056, USA

K. F. Eid

Department of Physics, Miami University, Oxford, Ohio 45056, USA

X. Liu

Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

J. K. Furdyna

Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Preferred Abstract (Original):

We used contact resistance measurements as a sensitive probe of near-surface magnetism in GaMnAs by studying the temperature dependence of the contact resistance at Cu/GaMnAs interfaces. The specific contact resistance (AR_C) has a peak that is clearly shifted towards lower temperature than that seen in GaMnAs resistivity. This shift suggests that the magnetization in the GaMnAs film is suppressed near the Cu interface. Furthermore, we show that when a native oxide layer is present between GaMnAs and Cu, the behavior of AR_C is dramatically different, due to the thicker tunnel barrier at the interface.

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Contact Resistance as a Probe of Near-Interface Ferromagnetism in Gamnas/Cu Bilayers