Impurity photoionization in semiconductors

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Journal Title, Volume, Page: 
Journal of Physics and Chemistry of Solids (Impact Factor: 1.59). 01/1990; 51(4):361-365.
Year of Publication: 
1990
Authors: 
Khaled Ilawi
Department of Physics,Middle East Technical University , Ankara
Current Affiliation: 
Associate Prof., Department of Physics, An-Najah National University ·
M.Tomak
Department of Physics,Middle East Technical University , Ankara
Preferred Abstract (Original): 

The dependence of photoionization cross-section on photon energy is calculated using different impurity potentials including the Hülthén potential. The effect of anisotropy is taken into account and is shown to affect the spectral dependence drastically.

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