Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films

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Journal Title, Volume, Page: 
Turk. J. Phys., 36, (2012), 385-391
Year of Publication: 
Atef Fayez QASRAWI
Group of Physics, Faculty of Engineering, Atılım University, 06836 Ankara-TURKEY
Khaled Faysal ILAIWI
Department of Physics, An-najah National University, Jenin, West Bank-PALESTINE
Dipartimento di Fisica, Sapienza Universita' di Roma, Piazzale A. Moro 2, 00185 Roma-ITALY
Preferred Abstract (Original): 
The effects of hydrogen ion implantation on the structural, electrical and optical properties of amorphous InSe thin films have been investigated. X-ray diffraction analysis revealed no change in the structure of the films. An implantation of 7.3 x 1018 ions/cm2 decreased the electrical conductivity by three orders of magnitude at 300 K. Similarly, the conductivity activation energy, which was calculated in the temperature range of 300-420 K, decreased from 210 to 78 meV by H-ion implantation. The optical measurements showed that the direct allowed transitions energy band gap of amorphous InSe films has decreased from 1.50 to 0.97 eV by implantation. Furthermore, significant decreases in the dispersion and oscillator energy, static refractive index and static dielectric constants are also observed by hydrogen implantation.
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