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Hydrogen Implantation Effects On The Electrical And Optical Properties Of Inse Thin Films |
Turk. J. Phys., 36, (2012), 385-391 |
|
2012 |
|
Optoelectronic properties of Ga4Se3S-layered single crystals |
Physica Scripta (Impact Factor: 1.03). 07/2008; 78. DOI: 10.1088/0031-8949/78/01/015701 |
|
2008 |
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Electronic structure of modulation-doped heterostructures: electric field effects |
Superlattices and Microstructures (Impact Factor: 1.98). 07/1998; 24(1):61-67. |
|
1998 |
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Effect of Electric and Magnetic Fields on the Energy levels of a Hydrogenic Impurity in GaAs/Ga1-xA1xAs Heterojunctions |
Qatar Univ.Science Journal 01/1997; 17(2):225-230. |
|
1997 |
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Screening effects on Polarizabilities of shallow donors and acceptors in Infinite barrier quantum wells |
Superlattices and Microstructures |
|
1996 |
|
Screening effect on polarizabilities of shallow donors and acceptors in finite‐barrier quantum wells |
physica status solidi (b) |
|
1996 |
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Photoionization of Shallow Donor Impurities in Finite-Barrier Quantum Wells |
physica status solidi (b) |
|
1995 |
|
Electron Polarization in Quantum Wells with Uniform Electric Field |
physica status solidi (b). 08/1991; 166(2):409 - 413. |
|
1991 |
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Electron polarization in a quantum well with uniform electric field |
Solid State Communications (Impact Factor: 1.7). 06/1991; 78(11). |
|
1991 |
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Electron polarization in a parabolic quantum well with uniform electric field |
Superlattices and Microstructures (Impact Factor: 1.98). 01/1991; 10(1):27-30. |
|
1991 |
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Polarizabilities of shallow donors in finite-barrier quantum wells. |
Physical review. B, Condensed matter (Impact Factor: 3.66). 09/1990; 42(5):3132-3134. |
|
1990 |
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Impurity photoionization in semiconductors |
Journal of Physics and Chemistry of Solids (Impact Factor: 1.59). 01/1990; 51(4):361-365. |
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1990 |
