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Local Potential Measurements in Silicon Devices using Atomic Force Microscopy with Conductive Tips

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Mon, 2014-03-03 10:17 — Zeid Naim Qamhieh
Journal Title, Volume, Page: 
Transactions of Nonferrous Metals Society of China
Year of Publication: 
1995
Link: 
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5436039&url=http%...
Authors: 
Qamhieh, Z.
Current Affiliation: 
Department of Physics, Faculty of Science, An-Najah National University, Palestine
[email protected]
De Wolf, P.
Trenkler, T.
Vandervorst, W.
Hellemans, L.
Hellemans, L.
Preferred Abstract (Original): 

In this paper another application of an Atomic Force Microscope (AFM) using conductive tips is presented: Voltages are applied to the semiconductor structure while a conductive tip is scanned across a cross section of the device. The tip is used as a voltage probe determining the local potential with very high resolution (nm limited by the tip size). Home-made cantilevers have been used to determine both one-and two-dimensional distributions. After a description of the preparation method the promising properties of the technique are demonstrated for simple p-n junctions. Prospectives for charge carrier profiling and electrical characterisation of fully processed devices are discussed.