The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method

Journal Title, Volume, Page:

An-Najah University Journal for Research - Natural Sciences - Volume 9, Issue 1

Year of Publication:

1995

Link:

http://scholar.najah.edu/publication/journal-article/electronic-structure-gax-1-...

Authors:

Mousa Al- Hasan

Department of Physics, Faculty of Science, An-Najah National University, Nablus, Palestine

Current Affiliation:

Department of Physics, Faculty of Science, An-Najah National University, Nablus, Palestine

[email protected]

Preferred Abstract (Original):

The calculation of the electronic structure of Gax In 1-x As and In Asx P1-x alloys using the recursion method is reported. A five-orbitals, sp3s*, per atom model is used in the tight-binding representation of the Hamiltonian. The local density of states is calculated for Ca, In, As and P-sites in a cluster of 216 atoms. The results are in good agreement with other calculations.

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The Electronic Structure of Gax In 1-x As and InASx P1-x Using the Recursion Method