The Electronic Band Structure of InN, InAs and InSb Compounds

Journal Title, Volume, Page:

Journal of Materials Science April 2008, Volume 43, Issue 8, pp 2935-2946

Year of Publication:

2007

Link:

http://link.springer.com/article/10.1007%2Fs10853-007-1794-4

Authors:

Musa El-Hasan

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

Current Affiliation:

Department of Physics, Faculty of Sciences, An-Najah National University, Palestine

[email protected]

Rezek Mohammad

Department of Physics, Middle East Technical University, Ankara 06531, Turkey

Şenay Katırcıoğlu

Department of Physics, Middle East Technical University, Ankara 06531, Turkey

[email protected]

Preferred Abstract (Original):

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp³d² basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.

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The Electronic Band Structure of InN, InAs and InSb Compounds